Irf840 Schaltplan. 2002 fairchild semiconductor corporation irf840 rev. Absolute maximum ratings ta 25 c symbol vdss vgs id i dm pd tj tstg parameter.
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Irf840 datasheet irf840 pdf irf840 data sheet irf840 manual irf840 pdf irf840 datenblatt electronics irf840 alldatasheet free datasheet datasheets data. Irf840 500 v 0 85 ω 8 a symbol parameter value unit vds drain source voltage vgs 0 500 v vdgr drain gate voltage rgs 20 kω 500 v vgs gate source voltage 20 v id drain current continuos at tc 25 c 8a id drain current continuos at tc 100 c 5 1 a idm l drain current pulsed 32 a ptot total dissipation at tc 25 c 125 w. N channel enhancement mode silicon gate tmos power field effect transistor irf840 datasheet irf840 circuit irf840 data sheet.
Irf840 500 v 0 85 ω 8 a symbol parameter value unit vds drain source voltage vgs 0 500 v vdgr drain gate voltage rgs 20 kω 500 v vgs gate source voltage 20 v id drain current continuos at tc 25 c 8a id drain current continuos at tc 100 c 5 1 a idm l drain current pulsed 32 a ptot total dissipation at tc 25 c 125 w.
Absolute maximum ratings ta 25 c symbol vdss vgs id i dm pd tj tstg parameter. Absolute maximum ratings ta 25 c symbol vdss vgs id i dm pd tj tstg parameter. The mosfet could switch loads that consume upto 8a it can turned on by providing a gate threshold voltage of 10v across the gate and source pin. N channel enhancement mode silicon gate tmos power field effect transistor irf840 datasheet irf840 circuit irf840 data sheet.
